Unveiling the influence of selective-area-regrowth interfaces on local electronic properties of GaN p-n junctions for efficient power devices

作者：Alexander S. Chang, Bingjun Li, Sizhen Wang, Sam Frisone, R. S. Goldman, Jung Han, Lincoln J. Lauhon · 发表于：Nano Energy · 年份：2022 · DOI：10.1016/j.nanoen.2022.107689 · 被引用次数：17 · 研究领域：GaN-based semiconductor devices and materials、Semiconductor materials and devices、Metal and Thin Film Mechanics