Novel High-Tolerance Termination With Resistive Field Plate for 600 V Super-Junction Vertical Double-Diffused MOSFET

作者：Ruidi Wang, Ming Qiao, Yibing Wang, Zhaoji Li, Bo Zhang · 发表于：IEEE Electron Device Letters · 年份：2022 · DOI：10.1109/led.2022.3180490 · 被引用次数：13 · 研究领域：Silicon Carbide Semiconductor Technologies、Semiconductor materials and devices、Advancements in Semiconductor Devices and Circuit Design

In this letter, a novel high-tolerance termination is proposed for 600 V super-junction vertical double-diffused MOSFET (SJ VDMOS). By using a multi-ring resistive field plate between the active region and edge ring, the narrow charge tolerance of termination for small cell pitch SJ VDMOS is improved remarkably. The surface field plate can dynamically deplete the excess charges and introduce additional electric field peaks, effectively counteracting the degradation caused by charge imbalance. Combined with the symmetrical folded layout, the tolerance of the P-type lateral connection (LC) layer reaches ±21.7%, and the design window of the P-pillar extends to the same range as that of the active region. This provides great flexibility for the design of the LC layer and even JFET and P-pillar implantation.