High temperature operation of logic AND gate based on diamond Schottky diodes fabricated by selective growth method

作者：Benjian Liu, Sen Zhang, V. G. Ralchenko, Dongyue Wen, Xiaohui Zhang, Jingjing Xue, Pengfei Qiao, Weihua Wang, Jiwen Zhao, Wenxin Cao, Bing Dai, Kang Liu, Jiecai Han, Jiaqi Zhu · 发表于：Carbon · 年份：2022 · DOI：10.1016/j.carbon.2022.06.040 · 被引用次数：26 · 研究领域：Diamond and Carbon-based Materials Research、Semiconductor materials and devices、Ion-surface interactions and analysis