A low-power memristor based on 2H–MoTe2 nanosheets with synaptic plasticity and arithmetic functions

作者：T. Yu, Z. Zhao, Helong Jiang, Zhengjin Weng, Yuan Fang, Chao Liu, W. Lei, Suhaidi Bin Shafe, Mohd Nazim Mohtar · 发表于：Materials Today Nano · 年份：2022 · DOI：10.1016/j.mtnano.2022.100233 · 被引用次数：20 · 研究领域：Advanced Memory and Neural Computing、Ferroelectric and Negative Capacitance Devices、Photoreceptor and optogenetics research