Ultrathin Sb 2 Se 3 Nanowires for Polarimetric Imaging Photodetectors with a High Signal/Noise Ratio

作者：Songqing Zhang, Han Wang, Maxwell Merle Kirchner, Junliang Liu, Huijia Luo, Yongling Ren, Cailei Yuan, Haroldo T. Hattori, Andrey E. Miroshnichenko, Wen Lei · 发表于：Advanced Materials Interfaces · 年份：2022 · DOI：10.1002/admi.202200448 · 被引用次数：45 · 研究领域：Chalcogenide Semiconductor Thin Films、Advanced Semiconductor Detectors and Materials、2D Materials and Applications

Abstract This work presents a study on the optical applications of chemical vapor deposition‐grown Sb 2 Se 3 nanowires in polarized single nanowire photodetectors. High‐quality Sb 2 Se 3 nanowires are obtained with diameters as small as ≈15 nm, which is the first report for ultrathin Sb 2 Se 3 nanowires. The fabricated Sb 2 Se 3 nanowire‐based photodetector presents a low shot noise of ≈ 9 × 10 –16 A Hz –1/2 , a large signal/noise ratio of 1436.55, a high responsivity of 3.61 A W –1 , and a high specific detectivity of 2.36 × 10 11 Jones, which can be attributed to the high‐quality crystalline nanowires obtained. More interestingly, the Sb 2 Se 3 nanowire‐based photodetectors exhibit broadband polarized photoresponse to incident light with wavelengths ranging from visible to near‐infrared (532 – 830 nm). A linearly dichroic ratio of 1.71 is obtained for the 830 nm light illumination. The Sb 2 Se 3 nanowire detectors also present appropriate polarimetric imaging quality, revealing the potential of Sb 2 Se 3 nanowires for polarimetric imaging applications.