Turn-on Condition and Characteristics of High-power Semiconductor Switch RSD

作者：Y. Zhou, Yingqiang Yu, H. Chen, L. Liang · 发表于：2006 5th International Power Electronics and Motion Control Conference · 年份：2006 · DOI：10.1109/ipemc.2006.297245 · 研究领域：Electrical Contact Performance and Analysis、Induction Heating and Inverter Technology、Silicon Carbide Semiconductor Technologies

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