Heterostructure Silicon Solar Cells with Enhanced Power Conversion Efficiency Based on Si x /Ni 3+ Self-Doped NiO x Passivating Contact

作者：Wei Zhang, Honglie Shen, Min Yin, Linfeng Lu, Binbin Xu, Dongdong Li · 发表于：ACS Omega · 年份：2022 · DOI：10.1021/acsomega.2c00496 · 被引用次数：54 · 研究领域：Silicon and Solar Cell Technologies、Semiconductor materials and interfaces、Thin-Film Transistor Technologies

High Resolution Image Download MS PowerPoint Slide Developing efficient crystalline silicon/wide-band gap metal-oxide thin-film heterostructure junction-based crystalline silicon ( c -Si) solar cells has been an attractive alternative to the silicon thin film-based counterparts. Herein, nickel oxide thin films are introduced as the hole-selective layer for c -Si solar cells and prepared using the reactive sputtering technique with the target of metallic nickel. An optimal Ni 3+ self-doped NiO x film is obtained by tuning the reactive oxygen atmosphere to construct the optimized c -Si/NiO x heterostructure band alignment. A thin SiO x interlayer was further introduced to reduce the defect of the c -Si/NiO x interface with the UV–ozone (UVO) treatment. The constructed p -type c -Si/SiO x /NiO x /Ag solar cell exhibits an increase in the open voltage from 586 to 611 mV and achieves a 19.2% conversion efficiency.