InSe:Ge-doped InSe van der Waals heterostructure to enhance photogenerated carrier separation for self-powered photoelectrochemical-type photodetectors

作者：Liping Liao, Bing Wu, Evgeniya Kovalska, Filipa M. Oliveira, Jalal Azadmanjiri, Vlastimil Mazánek, Lukáš Valdman, Lucie Spejchalová, Cunyun Xu, Petr Levinský, J. Hejtmánek, Zdeněk Sofer · 发表于：Nanoscale · 年份：2022 · DOI：10.1039/d1nr07150e · 被引用次数：23 · 研究领域：2D Materials and Applications、Perovskite Materials and Applications、Advanced Thermoelectric Materials and Devices

in Ge-doped crystals. Additionally, the Mott-Schottky model explored the mechanism of charge transfer and enhanced PEC performance. Band bending at the InSe/InSe(Ge)-electrolyte interface benefits the separation and transformation of photogenerated carriers from the heterostructure to electrolyte due to the tunable energy band alignment. These results indicate that the InSe/InSe(Ge) vdW heterostructure is promising for PEC-type photodetectors, which provide a novel way to utilize 2D vdW heterostructures in optoelectronics.