High-Performance MoS 2 Complementary Inverter Prepared by Oxygen Plasma Doping

作者：Shibo Wang, Xiangbin Zeng, Yufei Zhou, Jingjing Lü, Yishuo Hu, Wenzhao Wang, Junhao Wang, Yonghong Xiao, Xiya Wang, Duo Chen, Tingwei Xu, Maofa Zhang, Xiaoqing Bao · 发表于：ACS Applied Electronic Materials · 年份：2022 · DOI：10.1021/acsaelm.1c01070 · 被引用次数：28 · 研究领域：2D Materials and Applications、MXene and MAX Phase Materials、Ferroelectric and Negative Capacitance Devices

Two-dimensional transition-metal chalcogenide has become one of the most promising materials for miniaturization beyond Moore’s law due to its atomic-level thickness and excellent semiconductor properties. The inverter is the most basic logic gate circuit. Using double-temperature zone chemical vapor deposition and oxygen plasma doping technique, we obtained n-type and p-type MoS 2 materials and designed an MoS 2 CMOS inverter, showing excellent electrical performance. Under the condition of V dd = 5 V, the peak voltage gain of the inverter is 7.48, the maximum static power consumption is 37.7 nW, the noise margin low is 0.45 V dd, the noise margin high is 0.32 V dd, and the inverter exhibits better V in – V out signal matching. After a 42 day duration in an air environment at room temperature, the V out of the inverter was reduced by only 3.75% in the case of a high level of output voltage, and the low level of output voltage is basically unchanged.