A study of gate recess-width control of InP-based HEMTs by a Si3N4 passivation layer

作者：Yuying Xie, Mingsai Zhu, Jianan Deng, Yifang Chen · 发表于：Microelectronic Engineering · 年份：2021 · DOI：10.1016/j.mee.2021.111675 · 被引用次数：3 · 研究领域：Semiconductor Quantum Structures and Devices、GaN-based semiconductor devices and materials、Semiconductor materials and devices