High Operating Temperature InAs/GaSb Superlattice Based Mid Wavelength Infrared Photodetectors Grown by MOCVD

作者：He Zhu, Jia-Feng Liu, Hong Zhu, Yunlong Huai, Meng Li, Zhen Liu, Yong Huang · 发表于：Photonics · 年份：2021 · DOI：10.3390/photonics8120564 · 被引用次数：13 · 研究领域：Advanced Semiconductor Detectors and Materials、Semiconductor Quantum Structures and Devices、Chalcogenide Semiconductor Thin Films

High operating temperature mid-wavelength InAs/GaSb superlattice infrared photodetectors with a single heterojunction structure grown by metal–organic chemical vapor deposition are reported. By inserting a fully-depleted wider-gap barrier layer between the absorber and the p-contact, “diffusion-limited” behavior has been achieved for the heterojunction “PNn” device, in contrast to the conventional pin homojunction device. The PNn device with a 50% cutoff wavelength of 4.5 μm exhibited a dark current of 2.05 × 10−4 A/cm2 and a peak specific detectivity of 1.28 × 1011 cm·Hz·W−1 at 150 K and a reverse bias of −0.1 V.