Solution-Processed, Inverted AgBiS2 Nanocrystal Solar Cells

作者：Dezhang Chen, Sunil B. Shivarudraiah, Pai Geng, Michael Ng, C.-H. Angus Li, Neha Tewari, Xinhui Zou, Kam Sing Wong, Liang Guo, Jonathan E. Halpert · 发表于：ACS Applied Materials & Interfaces · 年份：2021 · DOI：10.1021/acsami.1c17133 · 被引用次数：40 · 研究领域：Quantum Dots Synthesis And Properties、Chalcogenide Semiconductor Thin Films、Perovskite Materials and Applications

AgBiS 2 nanocrystals are a promising nontoxic alternative to PbS, CsPbI 3, and CdS quantum dots for solution-fabricated nanocrystal photovoltaics. In this work, we fabricated the first inverted (p–i–n) structure AgBiS 2 nanocrystal solar cells. We selected spray-coated NiO as the hole-transporting material and used PCBM/BCP as the electron-transporting material. Combining transient photocurrent and photovoltage measurements with femtosecond transient absorption spectroscopy, we investigated the charge collection process on metal oxide/AgBiS 2 interfaces and demonstrated that the NiO/AgBiS 2 NC junction in the p–i–n configuration is more efficient for charge carrier collection. The fabricated p–i–n solar cells exhibited a 4.3% power conversion efficiency (PCE), which was higher than that of conventional n–i–p solar cells fabricated using the same sample. Additionally, inverted devices showed an ultrahigh short-circuit current ( J SC ) over 20.7 mA cm –2 and 0.38 V open-circuit voltage ( V OC ), suggesting their potential for further improvements in efficiency and, eventually, for large-scale production.