Vertically Stacked Nanosheets Tree-Type Reconfigurable Transistor With Improved ON-Current

作者：Yabin Sun, Xianglong Li, Ziyu Liu, Yun Liu, Xiaojin Li, Yanling Shi · 发表于：IEEE Transactions on Electron Devices · 年份：2021 · DOI：10.1109/ted.2021.3126266 · 被引用次数：46 · 研究领域：Semiconductor materials and devices、Ferroelectric and Negative Capacitance Devices、Advancements in Semiconductor Devices and Circuit Design

In this article, a novel tree-type channel reconfigurable field-effect transistor (RFET) is proposed to obtain improved ON-state performance. Compared with the conventional nanosheet (NS) channel structure, an additional interbridge (IB) channel is vertically intersected in tree-type RFET. Geometry parameters of IB and NS, along with various gate dielectric materials with fixed EOT, are investigated in the point of threshold voltage (${V}_{\text {TH}}$) and on-state current (${I}_{ {\mathrm {\scriptstyle{ON}}}}$). When high-${k}$gate dielectric is adopted, the large cross-sectional area of IB will provide a better ON-state characteristic because of the larger tunneling area. Compared with the conventional NS RFET,${I}_{ {\mathrm {\scriptstyle{ON}}}}$of tree-type RFET with IB width (${W}_{\text {IB}}$) = 5 nm, NS space (${S}_{\text {NS}}$) = 25 nm, and HfO2gate dielectric is separately demonstrated to improve by 44.6% and 60.2% for n- and p-type program, while in the case of SiO2gate dielectric, suitable size parameters should be selected to obtain an improved ON-state current because of the tunneling strength. The underlying physical mechanism is discussed in detail.