Controlled Silicidation of Silicon Nanowires Using Flash Lamp Annealing

作者：Muhammad Bilal Khan, Sławomir Prucnal, Sayantan Ghosh, Dipjyoti Deb, René Hübner, Darius Pohl, L. Rebohle, Thomas Mikolajick, Artur Erbe, Yordan Marchev Georgiev · 发表于：Langmuir · 年份：2021 · DOI：10.1021/acs.langmuir.1c01862 · 被引用次数：16 · 研究领域：Nanowire Synthesis and Applications、Semiconductor materials and devices、Semiconductor materials and interfaces

Among other new device concepts, nickel silicide (NiSix)-based Schottky barrier nanowire transistors are projected to supplement down-scaling of the complementary metal–oxide semiconductor (CMOS) technology as its physical limits are reached. Control over the NiSix phase and its intrusions into the nanowire is essential for superior performance and down-scaling of these devices. Several works have shown control over the phase, but control over the intrusion lengths has remained a challenge. To overcome this, we report a novel millisecond-range flash lamp annealing (FLA)-based silicidation process. Nanowires are fabricated on silicon-on-insulator substrates using a top-down approach. Subsequently, Ni silicidation experiments are carried out using FLA. It is demonstrated that this silicidation process gives unprecedented control over the silicide intrusions. Scanning electron microscopy and high-resolution transmission electron microscopy are performed for structural characterization of the silicide. FLA temperatures are estimated with the help of simulations.