Wide-Bandgap Power Semiconductors for Electric Vehicle Systems: Challenges and Trends

作者：Thang Van Do, João Pedro F. Trovão, Ke Li, Loïc Boulon · 发表于：IEEE Vehicular Technology Magazine · 年份：2021 · DOI：10.1109/mvt.2021.3112943 · 被引用次数：92 · 研究领域：Electromagnetic Compatibility and Noise Suppression、Silicon Carbide Semiconductor Technologies、Advanced DC-DC Converters

In recent years, researchers have been attracted to the application of wide-bandgap (WBG) power semiconductor devices such as silicon carbide (SiC) and gallium nitride (GaN) in electric vehicle (EV) applications. Their advantages over Si power semiconductors are lower power losses, higher switching frequencies, and higher junction temperatures. Thus, using WBG power semiconductor devices for EV power electronic systems improves EV efficiency, reliability, and mileage; however, these adoptions are still under challenges in terms of packaging and power converters design. In this article, future trends and prospects of using WBG power semiconductor devices in EV systems are first presented. Then, the recent progress of different commercial WBG power semiconductor devices is reviewed and different solutions are reported to overcome R&D obstacles.