Computational insights into optoelectronic and magnetic properties of V(III)-doped GaN

作者：Muhammad Sheraz Khan, Muhammad Sheraz Khan, Muhammad Ikram, Lijie Shi, Bingsuo Zou, Hamid Ullah, Muhammad Yar Khan, Muhammad Yar Khan · 发表于：Journal of Solid State Chemistry · 年份：2021 · DOI：10.1016/j.jssc.2021.122606 · 被引用次数：16 · 研究领域：GaN-based semiconductor devices and materials、ZnO doping and properties、Ga2O3 and related materials