Vertically stacked Bi 2 Se 3 /MoTe 2 heterostructure with large band offsets for nanoelectronics

作者：Lin Tao, Bin Yao, Qian Yue, Zhiying Dan, Peiting Wen, Mengmeng Yang, Zhaoqiang Zheng, Dongxiang Luo, W. J. Fan, Xiaozhou Wang, Wei Gao · 发表于：Nanoscale · 年份：2021 · DOI：10.1039/d1nr04281e · 被引用次数：48 · 研究领域：2D Materials and Applications、Topological Materials and Phenomena、Advanced Thermoelectric Materials and Devices

Jones for a visible light of 405 nm under zero-bias. Our work demonstrates a new universal method to fabricate a topological insulator and paves a new strategy for the construction of novel van der Waals tunneling structures.