Compact and Physics-Based Modeling of 3-D Inductor Based on Through Silicon Via

作者：Wei Xiong, Gang Dong, Zhangming Zhu, Yintang Yang · 发表于：IEEE Electron Device Letters · 年份：2021 · DOI：10.1109/led.2021.3107320 · 被引用次数：21 · 研究领域：3D IC and TSV technologies、Radio Frequency Integrated Circuit Design、Thin-Film Transistor Technologies

This letter presents a compact and physics based model for through silicon via (TSV) based 3-D inductors. By utilizing frequency-independent lumped elements, this model accounts for skin and proximity effects in TSVs and redistribution layers (RDL), feedforward capacitance, parasitic capacitance introduced by the oxide liner of TSVs, and the parasitics of substrate. The accuracy of the model is confirmed by experimental and electromagnetic simulation results. By using the proposed model, the${R}$,${L}$and${Q}$characteristics of TSV-based inductors can be evaluated accurately and conveniently in a wideband frequency range.