Wafer‐fused 1300 nm VCSELs with an active region based on superlattice

作者：S. A. Blokhin, A. V. Babichev, A. G. Gladyshev, L. Ya. Karachinsky, I. I. Novikov, A. A. Blokhin, S. S. Rochas, Dmitrii V. Denisov, K. O. Voropaev, Alexander Ionov, N. N. Ledentsov, A. Yu. Egorov · 发表于：Electronics Letters · 年份：2021 · DOI：10.1049/ell2.12232 · 被引用次数：28 · 研究领域：Semiconductor Lasers and Optical Devices、Semiconductor Quantum Structures and Devices、Photonic and Optical Devices

Abstract The 1300 nm range vertical‐cavity surface‐emitting lasers with the active region based on InGaAs/InGaAlAs superlattice are fabricated using molecular‐beam epitaxy and the double wafer‐fusion technique. Lasers with the buried tunnel junction diameter of 5 μm have shown single‐mode CW operation with the output optical power of ∼6 mW at 20°C. Opened eye diagrams are observed up to 10 Gbps.