Low-bias resistive switching in BaTiO3/Al2O3/ITO structures with various thicknesses of Al2O3 layer

作者：Chaotao He, Yu Lu, Yuanyuan Tang, Xiulin Li, Peng Chen · 发表于：Applied Physics A · 年份：2021 · DOI：10.1007/s00339-021-04624-4 · 被引用次数：9 · 研究领域：Advanced Memory and Neural Computing、Ferroelectric and Negative Capacitance Devices、Ferroelectric and Piezoelectric Materials