Excellent optoelectronic applications and electrical transport behavior of the n-WO 3 nanostructures/p-diamond heterojunction: a new perspective

作者：Yu Yao, Dandan Sang, Susu Duan, Qinglin Wang, Cailong Liu · 发表于：Nanotechnology · 年份：2021 · DOI：10.1088/1361-6528/abfe24 · 被引用次数：14 · 研究领域：Transition Metal Oxide Nanomaterials、ZnO doping and properties、Gas Sensing Nanomaterials and Sensors

Abstract Nanostructured n-type metal oxides/p-type boron-doped diamond heterojunctions have demonstrated a typical rectification feature and/or negative differential resistance (NDR) potentially applied in wide fields. Recently, the fabrication and electronic transport behavior of n-WO 3 nanorods/p-diamond heterojunction at high temperatures were studied by Wang et al (2017 Appl. Phys. Lett. 110 052106), which opened the door for optoelectronic applications that can operate at high-temperatures, high-power, and in various harsh environments. In this perspective, an overview was presented on the future directions, challenges and opportunities for the optoelectronic applications based on the n-WO 3 nanostructures/p-diamond heterojunction. We focus, in particular, on the prospects for its high temperature NDR, UV photodetector, field emission emitters, photocatalyst and optical information storage for a wide range of new optoelectronic applications.