Annealing effects on the optical and electrochemical properties of tantalum pentoxide films

作者：Wei Ren, Guang-Dao Yang, Ailing Feng, Ruixia Miao, Junbo Xia, Yonggang Wang · 发表于：Journal of Advanced Ceramics · 年份：2021 · DOI：10.1007/s40145-021-0465-2 · 被引用次数：44 · 研究领域：Semiconductor materials and devices、Electronic and Structural Properties of Oxides、ZnO doping and properties

Abstract Tantalum pentoxide (Ta 2 O 5 ) has attracted intensive attention due to their excellent physicochemical properties. Ta 2 O 5 films were synthesized via electron beam evaporation (EBE) and subsequently annealed at different temperatures ranging from 300 to 900 °C. X-ray diffraction (XRD) results show that amorphous Ta 2 O 5 thin films form from 300 to 700 °C and then a phase transition to polycrystalline β-Ta 2 O 5 films occurs since 900 °C. The surface morphology of the Ta 2 O 5 films is uniform and smooth. The resulted Ta 2 O 5 films exhibit excellent transmittance properties for wavelengths ranging from 300 to 1100 nm. The bandgap of the Ta 2 O 5 films is broadened from 4.32 to 4.46 eV by annealing. The 900 °C polycrystalline film electrode has improved electrochemical stability, compared to the other amorphous counterparts.