The performance limits of hexagonal boron nitride as an insulator for scaled CMOS devices based on two-dimensional materials

作者：Theresia Knobloch, Yu. Yu. Illarionov, Fabian Ducry, Christian Schleich, Stefan Wachter, Kenji Watanabe, Takashi Taniguchi, Thomas Mueller, Michael Waltl, Mario Lanza, Mikhail I. Vexler, Mathieu Luisier, Tibor Grasser · 发表于：Nature Electronics · 年份：2021 · DOI：10.1038/s41928-020-00529-x · 被引用次数：366 · 研究领域：2D Materials and Applications、MXene and MAX Phase Materials、Ferroelectric and Negative Capacitance Devices