High-Performance Field Emitters Based on SiC Nanowires with Designed Electron Emission Sites

作者：Xiaoxiao Li, Chenxuan Lou, Weijun Li, Lin Wang, Fengmei Gao, Gang Shao, Shanliang Chen, Weiyou Yang · 发表于：ACS Applied Materials & Interfaces · 年份：2021 · DOI：10.1021/acsami.0c20694 · 被引用次数：25 · 研究领域：Carbon Nanotubes in Composites、Diamond and Carbon-based Materials Research、Semiconductor materials and devices

Making field emitters with both low turn-on field ( E to ) and high current emission stability is one of the keys to push forward their practical applications. In the present work, we report the exploration of high-performance field emitters with designed sharp corners around SiC nanowires for fundamentally enhanced electron emission sites. The sharp corners with tailored densities are rationally created based on a facile etching technique. Accordingly, the emission sites and nanowires are integrated into a single-crystalline configuration without interfaces, which could offer the emitters with a robust structure to avoid the structural damage induced by the generated Joule heat and electrostatic forces over long-term field emission (FE) operation. Consequently, the E to of the as-fabricated SiC field emitter is low down to 0.52 V/μm, which is comparable to the state-of-the-art one ever reported. Moreover, they have high electron emission stability with a current fluctuation of just 2% over 10 h, representing their promising applications in FE-based electronic units.