Photoelectric properties of MIS structures on high-resistivity p-type silicon with aluminium nitride tunnelling insulator

作者：N. V. Bazlov, A. M. Danishevskiı̆, A. Derbin, I. Drachnev, I. M. Kotina, O. I. Kon’kov, A M Kuzmichev, M. S. Lasakov, М. В. Трушин, E. Unzhakov · 发表于：Journal of Physics Conference Series · 年份：2020 · DOI：10.1088/1742-6596/1697/1/012181 · 被引用次数：1 · 研究领域：GaN-based semiconductor devices and materials、Semiconductor materials and devices、Ga2O3 and related materials

Abstract Photoelectric properties of MIS tunnel diodes produced on high-resistive p-type silicon wafers with thin aluminium nitride AlN insulator layer and Pd or Al metal gate electrodes were investigated. It was found that synthesized AlN films possess a fixed positive charge, which leads to the creation of near-surface inversion layer in silicon substrate. The ratio of the photocurrent to the dark current K = Iph / Idark (on / off ratio) was found to depend on the gate electrode material, illumination intensity and the applied reverse bias. For studied MIS structures K ratio varied from 10 4 to 10 5 and was two orders of magnitude higher than that for the control MS structure without the insulator layer. High on / off ratio of such MIS structures with AlN tunnelling insulator promotes their application as an effective photodetectors in optoelectronics.