Gate Tunable Memtransistor based on Monolayer Molybdenum Disulfide

作者：Meng Yan, Fang Wang, Jiaqiang Shen, Xichao Di, Xin Lin, Huanhuan Di, Wei Mi, Kailiang Zhang · 年份：2020 · DOI：10.1109/cstic49141.2020.9282520 · 被引用次数：2 · 研究领域：Advanced Memory and Neural Computing、Ferroelectric and Negative Capacitance Devices、Transition Metal Oxide Nanomaterials

As a typical representative of two-dimensional (2D) materials, recently Mos2was considered as the candidate to the development of electronic synaptic devices due to its ultrathin thickness and special properties. However, dual-terminal artificial synapse devices still exit the challenges about the simulation of biological synapses, which is hard for two-terminal devices to update and read the synaptic weight at the same time. In this work, Mos2films were grown by chemical vapor deposition (the sample's largest single triangular size is about 83μm), and three-terminal synaptic devices based on back-gate FETs on Si/SiO2substrate were fabricated. MoS2sample's morphology and device's structure were characterized by Raman spectroscopy and optical microscope (OM). The memtransistor has excellent resistive switching (RS) behavior. By optimizing the pulse, the memtransistor showed a better conductivity linearity, and typical synaptic characteristics were mimicked, such as short-term/long-term plasticity (STP/LTP), excitatory post-synaptic current (EPSC)/inhibitory post-synaptic current (IPSC) and paired-pulse facilitation (PPF).