Continuous-wave operation of InAs/InP quantum dot tunable external-cavity laser grown by metal-organic chemical vapor deposition*

作者：Yan Wang, Shuai Luo, Hai‐Ming Ji, Di Qu, Yidong Huang · 发表于：Chinese Physics B · 年份：2020 · DOI：10.1088/1674-1056/abcfa4 · 被引用次数：7 · 研究领域：Semiconductor Quantum Structures and Devices、Semiconductor Lasers and Optical Devices、Photonic and Optical Devices

We demonstrate high-performance broadband tunable external-cavity lasers (ECLs) with the metal-organic chemical vapor deposition (MOCVD) grown InAs/InP quantum dots (QDs) structures. Without cavity facet coatings, the 3-dB spectral bandwidth of the Fabry–Perot (FP) laser is approximately 10.8 nm, while the tuning bandwidth of ECLs is 45 nm. Combined with the anti-reflection (AR) / high-reflection (HR) facet coating, a 92 nm bandwidth tuning range has been obtained with the wavelength covering from 1414 nm to 1506 nm. In most of the tuning range, the threshold current density is lower than 1.5 kA/cm 2 . The maximum output power of 6.5 mW was achieved under a 500 mA injection current. All achievements mentioned above were obtained under continuous-wave (CW) mode at room temperature (RT).