Enhancement of electrical properties of solution-processed oxide thin film transistors using ZrO 2 gate dielectrics deposited by an oxygen-doped solution

作者：Chunlai Luo, Ting Huang, Changhao Li, Yan Zhang, Zhengmiao Zou, Yushan Li, Ruiqiang Tao, Jinwei Gao, Guofu Zhou, Xubing Lu, Jun‐Ming Liu · 发表于：Journal of Physics D Applied Physics · 年份：2020 · DOI：10.1088/1361-6463/abd062 · 被引用次数：13 · 研究领域：Thin-Film Transistor Technologies、Semiconductor materials and devices、ZnO doping and properties

Abstract Solution deposition of high-quality dielectric films is one of the big challenges in achieving excellent electrical performance of bi-layer solution-processed metal oxide (MO) thin film transistors (TFTs). Using an oxygen-doped precursor solution (ODS), we successfully deposited high-quality zirconium oxide (ZrO 2 ) dielectric films by a solution process. The ODS-ZrO 2 films show low leakage current density (10 −7 A cm −2 at 2 MV cm −1 ), high breakdown electric field (7.0 MV cm −1 ) and high permittivity (19.5). Consequently, solution-processed indium oxide (In 2 O 3 ) TFTs with ODS-ZrO 2 film as the gate dielectric show excellent electrical performance, for example high carrier mobility up to 62.02 cm 2 V s −1 , a large on/off drain current ratio of 3.0 × 10 6 , a small subthreshold swing of 0.14 V and excellent bias stress stability. Our work demonstrates the critical role of the dielectric film in the electrical performance of MO-TFTs. More importantly, we reveal that high dielectric constant ( κ ) dielectric film deposited with ODS should be an effective way to significantly increase the electrical properties of MO-TFTs for future low-cost, high-performance applications.