Direct-Current Generator Based on Dynamic PN Junctions with the Designed Voltage Output

作者：Yanghua Lu, Zhenzhen Hao, Sirui Feng, Runjiang Shen, Yanfei Yan, Shisheng Lin · 发表于：iScience · 年份：2019 · DOI：10.1016/j.isci.2019.11.004 · 被引用次数：102 · 研究领域：GaN-based semiconductor devices and materials、Wireless Power Transfer Systems、ZnO doping and properties

The static PN junction is the foundation of integrated circuits. Herein, we pioneer a high current density generation by mechanically moving N-type semiconductor over P-type semiconductor, named as the dynamic PN junction. The establishment and destruction of the depletion layer causes the redistribution and rebounding of diffusing carriers by the built-in field, similar to a capacitive charge/discharge process of PN junction capacitance during the movement. Through inserting dielectric layer at the interface of the dynamic PN junction, output voltage can be improved and designed numerically according to the energy level difference between the valence band of semiconductor and conduction band of dielectric layer. Especially, the dynamic MoS 2 /AlN/Si generator with open-circuit voltage of 5.1 V, short-circuit current density of 112.0 A/m 2 , power density of 130.0 W/m 2 , and power-conversion efficiency of 32.5% has been achieved, which can light up light-emitting diode timely and directly. This generator can continuously work for 1 h, demonstrating its great potential applications.