Gate Stack Engineering in MoS 2 Field‐Effect Transistor for Reduced Channel Doping and Hysteresis Effect

作者：Yaochen Sheng, Xinyu Chen, Fuyou Liao, Yin Wang, Jingyi Ma, Jianan Deng, Zhongxun Guo, Sitong Bu, Hui Shen, Fuyu Bai, Daming Huang, Jianlu Wang, Weida Hu, Lin Chen, Hao Zhu, Qingqing Sun, Peng Zhou, David Wei Zhang, Jing Wan, Wenzhong Bao · 发表于：Advanced Electronic Materials · 年份：2020 · DOI：10.1002/aelm.202000395 · 被引用次数：37 · 研究领域：2D Materials and Applications、Graphene research and applications、Ferroelectric and Negative Capacitance Devices

Abstract 2D transition metal dichalcogenides (TMDs) are promising semiconductive films for applications in future devices due to their prosperous and tunable band structures. However, most TMD‐based top gate transistors suffer from a significant doping effect in the channel due to the subsequent deposition high‐ k dielectric layer and metal gate, which limits their practical applications. In this work, the channel doping effect caused by various processing steps based on mechanical exfoliated MoS 2 sheets is systematically investigated. This work illustrates a clear correlation among these steps and provides a simple and efficient methodology to realize high‐performance enhancement mode MoS 2 field effect transistors, which can be extended to other 2D materials.