Antiferromagnetic spintronics

作者：V. Baltz, Aurélien Manchon, Maxim Tsoi, Takahiro Moriyama, Teruo Ono, Yaroslav Tserkovnyak · 发表于：Reviews of Modern Physics · 年份：2018 · DOI：10.1103/revmodphys.90.015005 · 研究领域：Magnetic properties of thin films、ZnO doping and properties、Physics of Superconductivity and Magnetism

Spintronics utilizing antiferromagnetic materials has potential for the next generation of applications and offers opportunities for new ideas. Ultimately, antiferromagnets could replace ferromagnets as the active spin-dependent element on which spintronic devices are based. Central to this endeavor is the need for predictive models, relevant disruptive materials, and new experimental designs. This paper reviews spintronic effects described based on theoretical and experimental analysis of antiferromagnetic materials.