Homogeneous 2D MoTe 2 CMOS Inverters and p–n Junctions Formed by Laser‐Irradiation‐Induced p‐Type Doping

作者：Jing Chen, Junqiang Zhu, Qiyuan Wang, Jing Wan, Ran Liu · 发表于：Small · 年份：2020 · DOI：10.1002/smll.202001428 · 被引用次数：43 · 研究领域：2D Materials and Applications、Graphene research and applications、MXene and MAX Phase Materials

Abstract Among all typical transition‐metal dichalcogenides (TMDs), the bandgap of α‐MoTe 2 is smallest and is close to that of conventional 3D Si. The properties of α‐MoTe 2 make it a favorable candidate for future electronic devices. Even though there are a few reports regarding fabrication of complementary metal–oxide‐semiconductor (CMOS) inverters or p–n junction by controlling the charge‐carrier polarity of TMDs, the fabrication process is complicated. Here, a straightforward selective doping technique is demonstrated to fabricate a 2D p–n junction diode and CMOS inverter on a single α‐MoTe 2 nanoflake. The n‐doped channel of a single α‐MoTe 2 nanoflake is selectively converted to a p‐doped region via laser‐irradiation‐induced MoO x doping. The homogeneous 2D MoTe 2 CMOS inverter has a high DC voltage gain of 28, desirable noise margin (NM H = 0.52 V DD , NM L = 0.40 V DD ), and an AC gain of 4 at 10 kHz. The results show that the doping technique by laser scan can be potentially used for future larger‐scale MoTe 2 CMOS circuits.