Fast Speed Ga2O3 Solar-blind Schottky Photodiodes with Large Sensitive Area

作者：Yang Xu, Xuanhu Chen, Yanfang Zhang, Fangfang Ren, Shulin Gu, Jiandong Ye · 发表于：IEEE Electron Device Letters · 年份：2020 · DOI：10.1109/led.2020.2998804 · 被引用次数：45 · 研究领域：Ga2O3 and related materials、ZnO doping and properties、Electronic and Structural Properties of Oxides

We reported on a fast-speed and self-powered β-Ga2O3vertical Schottky solar-blind photodiodes of 7 mm × 7 mm detecting area. Operated at zero bias, this photovoltaic diode exhibits a peak responsivity of 9.78 A/W at 212 nm with its corresponding specific detectivity of 3.29 × 1014Jones. An UVC-to-UVA rejection ratio over 104 is also achieved that is mainly limited by the internal photoemission of hot electrons from metal injecting into Ga2O3. In particular, the diode exhibits a recorded shortest response time of2O3photodetectors reported to date. Along with the large sensitive area, high detectivity and fast response speed allows them suitable for the real time response to objectives with high speed and weak flux of solar-blind spectral signal or high-energy radiations.