Insight into interface behavior and microscopic switching mechanism for flexible HfO2 RRAM

作者：Jingwei Zhang, Fang Wang, Chuang Li, Xin Shan, Ange Liang, Kai Hu, Yue Li, Qi Liu, Yaowu Hao, Kailiang Zhang · 发表于：Applied Surface Science · 年份：2020 · DOI：10.1016/j.apsusc.2020.146723 · 被引用次数：35 · 研究领域：Advanced Memory and Neural Computing、Ferroelectric and Negative Capacitance Devices、Electronic and Structural Properties of Oxides