Activating the Basal Plane of Defective SnS2 Nanosheets for NH3 Gas Sensing

作者：Bo Zhang, Yaoda Liu, Tingting Liang, Thangavel Sakthivel, Lingmin Yu, Zhengfei Dai · 发表于：ACS Applied Nano Materials · 年份：2020 · DOI：10.1021/acsanm.0c00649 · 被引用次数：71 · 研究领域：Gas Sensing Nanomaterials and Sensors、2D Materials and Applications、Advanced Photocatalysis Techniques

Layered metal dichalcogenides (LMDs) have been acknowledged as having an efficient gas-sensing process because of their tunable electronic structure and active edge sites. However, the full operation of their sensing properties is greatly hindered by the inactive basal plane of LMD and thus could possibly be considered by deblocking the basal plane. Herein, defective SnS 2 nanosheets were synthesized via a facile solvothermal process with subsequent argon plasma irradiation in just several seconds and have been exploited for NH 3 gas-sensing applications. A large number of surface defects on SnS 2 nanosheets were produced by plasma treatment and tailored by the irradiation time to modulate the electronic structure. It is found that SnS 2 nanosheets after 4 s of Ar plasma treatment exhibit promising NH 3 -sensing properties including high sensitivity, superior selectivity, and promoted sensing kinetics as well as low operation temperature. A five-axe spider-web diagram was also established for the evaluation of suitable operation condition. Furthermore, density functional theory calculations were conducted to reveal the rationales behind the defect-enhanced sensing behaviors. The results suggest that the efficient NH 3 detection and NH 3 adsorption transient from physi- to chemisorption mechanism are dominated by the S-vacancy defects on the basal plane. This work may open up interesting horizons for rational design of the LMD-based materials with promising sensing behaviors t...