Enhanced Thermoelectric Performance in Lead-Free Inorganic CsSn 1 –x Ge x I 3 Perovskite Semiconductors

作者：Feng Qian, Mingyu Hu, Jue Gong, Chunyu Ge, Yunxuan Zhou, Yunxuan Zhou, Guo Jun, Min Chen, Zhen‐Hua Ge, Nitin P. Padture, Yuanyuan Zhou, Yuanyuan Zhou, Jing Feng · 发表于：The Journal of Physical Chemistry C · 年份：2020 · DOI：10.1021/acs.jpcc.0c00459 · 被引用次数：68 · 研究领域：Perovskite Materials and Applications、Advanced Thermoelectric Materials and Devices、Chalcogenide Semiconductor Thin Films

Halide perovskite semiconductors exhibit ultralow thermal conductivities, making them potentially suitable for thermoelectric applications. Nevertheless, the thermoelectric properties of the prototypical halide perovskite of CH 3 NH 3 PbI 3 have been limited with a very low dimensionless figure of merit (ZT) and a narrow operating temperature window, which are attributed to its poor electronic conductivity and unstable hybrid organic–inorganic composition, respectively. Here, we report the bulk synthesis of a stable, all-inorganic halide perovskite of CsSn 0.8 Ge 0.2 I 3 as a new thermoelectric material, which shows a 10 order of magnitude enhancement in ZT compared with that of CH 3 NH 3 PbI 3 and an operating temperature as high as 473 K. Importantly, this CsSn 0.8 Ge 0.2 I 3 perovskite is also Pb-free in the composition, attesting its high potential as an environmentally friendly candidate material for future thermoelectrics.