Device physical parameters extraction of high-speed VCSELs

作者：Marwan Bou Sanayeh, Wissam Hamad, Mariane Mansour, Reem Al Fata, Elsie Nakhle, Anthony Youssef, Mustapha Hamad, Georges Semaan, Werner Hofmann · 年份：2020 · DOI：10.1117/12.2555955 · 研究领域：Semiconductor Lasers and Optical Devices、Molecular Junctions and Nanostructures、Photonic and Optical Devices

Realizing that vertical cavity surface emitting lasers (VCSELs) are continuously breaking higher bandwidth limits, it is essential to understand their basic material constituting properties and extract their physical characteristics, in order to fine tune their high-speed performance. Throughout the past decade, the device performance was continuously optimized towards higher bandwidths, faster data rates, and efficient operation. Therefore, for a successful further optimization of their dynamic characteristics, the extraction of a reliable set of their physical parameters becomes indispensable. Consequently, the main objective of this work is to provide accurate physical parameter values of cutting-edge high-speed VCSELs. The extraction process of these set of parameters is based on the novel intrinsic and extrinsic dynamic models that were recently developed by our research group. For the intrinsic dynamics, the advanced split carrier reservoir multimode model is employed. Furthermore, the pure intrinsic modulation response is de-embedded from the total measured device response using our recently proposed novel parasitic-network model. Moreover, the extraction of these device physical parameters is based on the device’s performance indicators, such as the relaxation oscillation frequencies and damping coefficients obtained by fitting the intrinsic model to the measured modulation data. Furthermore, since these performance indicators can be expressed in terms of a combinatio...