Optical Gain in Laser Heterostructures with an Active Area Based on an InGaAs/InGaAlAs Superlattice

作者：L. Ya. Karachinsky, I. I. Novikov, A. V. Babichev, A. G. Gladyshev, E. S. Kolodeznyi, S. S. Rochas, A. S. Kurochkin, Yu. K. Bobretsova, A. A. Klimov, D. V. Denisov, K. O. Voropaev, А. С. Ионов, V.E. Bougrov, A. Yu. Egorov · 发表于：Optics and Spectroscopy · 年份：2019 · DOI：10.1134/s0030400x19120099 · 被引用次数：22 · 研究领域：Semiconductor Quantum Structures and Devices、Semiconductor Lasers and Optical Devices、Photonic and Optical Devices

Abstract An active area based on InGaAs/InGaAlAs superlattice for laser diodes operating in the spectral range between 1535 and 1565 nm is proposed and realized practically. It is demonstrated that using a superlattice increases the mode gain at the same values of the pump-diode current density relative to a typical active-area design based on an array of InGaAs quantum wells.