Narrow‐Band Thermal Emitter with Titanium Nitride Thin Film Demonstrating High Temperature Stability

作者：Zih‐Ying Yang, Satoshi Ishii, Anh Tung Doan, Satish Laxman Shinde, Thang Duy Dao, Yu‐Ping Lo, Kuo‐Ping Chen, Tadaaki Nagao · 发表于：Advanced Optical Materials · 年份：2020 · DOI：10.1002/adom.201900982 · 被引用次数：57 · 研究领域：Thermal Radiation and Cooling Technologies、Photonic Crystals and Applications、Optical properties and cooling technologies in crystalline materials

Abstract A refractory wavelength selective thermal emitter is experimentally realized by the excitation of Tamm plasmon polaritons (TPPs) between a titanium nitride (TiN) thin film and a distributed Bragg reflector (DBR). The absorptance reaches nearly unity at ≈3.73 μm with the bandwidth of 0.36 μm in the experiment. High temperature stabilities are confirmed up to 500 and 1000 °C in ambient and in vacuum, respectively. When the TiN TPP structure is compared to the TiN–insulator–TiN (TiN‐metal–insulator–metal (MIM)) structure, the former shows higher Q ‐factor, which indicates the advantage of choosing the TiN TTP structure against the MIM structure. The proposed refractory TiN TPP structure is lithography‐free and scalable, which paves a way for large scale thermal emitters in practical usage.