Electric‐Field‐Controlled Antiferromagnetic Spintronic Devices

作者：Han Yan, Zexin Feng, Peixin Qin, Xiaorong Zhou, Huixin Guo, Xiaoning Wang, Hongyu Chen, Xin Zhang, Haojiang Wu, Chengbao Jiang, Zhiqi Liu · 发表于：Advanced Materials · 年份：2020 · DOI：10.1002/adma.201905603 · 被引用次数：164 · 研究领域：Multiferroics and related materials、Magnetic and transport properties of perovskites and related materials、Electronic and Structural Properties of Oxides

In recent years, the field of antiferromagnetic spintronics has been substantially advanced. Electric-field control is a promising approach for achieving ultralow power spintronic devices via suppressing Joule heating. Here, cutting-edge research, including electric-field modulation of antiferromagnetic spintronic devices using strain, ionic liquids, dielectric materials, and electrochemical ionic migration, is comprehensively reviewed. Various emergent topics such as the Néel spin-orbit torque, chiral spintronics, topological antiferromagnetic spintronics, anisotropic magnetoresistance, memory devices, 2D magnetism, and magneto-ionic modulation with respect to antiferromagnets are examined. In conclusion, the possibility of realizing high-quality room-temperature antiferromagnetic tunnel junctions, antiferromagnetic spin logic devices, and artificial antiferromagnetic neurons is highlighted. It is expected that this work provides an appropriate and forward-looking perspective that will promote the rapid development of this field.