Pressure‐Induced Superconductivity in Topological Semimetal Candidate TaTe 4

作者：Yifang Yuan, Weike Wang, Yonghui Zhou, Yonghui Zhou, Xuliang Chen, Chuanchuan Gu, Chao An, Ying Zhou, Ying Zhou, Bowen Zhang, Chunhua Chen, Ranran Zhang, Zhaorong Yang · 发表于：Advanced Electronic Materials · 年份：2020 · DOI：10.1002/aelm.201901260 · 被引用次数：15 · 研究领域：2D Materials and Applications、Topological Materials and Phenomena、Iron-based superconductors research

Abstract Quasi‐1D transition metal tetrachalcogenide TaTe 4 exhibits charge‐density waves (CDW), large anisotropic magnetoresistance, and nontrivial Berry phase at ambient pressure. Pressure‐induced superconductivity is reported in pristine TaTe 4 via electrical transport experiments. It is shown that the superconductivity, first observed at P c ≈ 8.0 GPa, is robust up to 50.6 GPa. No structural transition is detected up to 21.4 GPa, which indicates the tetragonal structure of TaTe 4 is stable across P c . Hall resistivity measurements reveal that both electron and hole densities increase sharply upon compression up to P c and level off at higher pressures, suggesting that the emergent superconductivity of pressurized TaTe 4 can be attributed to the enhancement of the charge carrier density. This finding may provide a new platform to investigate the interplay among superconducting, CDW, and topological orders.