Broadband supercontinuum generation in nitrogen-rich silicon nitride waveguides using a 300 mm industrial platform

作者：Christian Lafforgue, Sylvain Guerber, Joan Manel Ramírez, Guillaume Marcaud, Carlos Alonso‐Ramos, Xavier Le Roux, Delphine Marris‐Morini, Éric Cassan, Charles Baudot, Frédéric Boeuf, S. Crémer, S. Monfray, Laurent Vivien · 发表于：Photonics Research · 年份：2020 · DOI：10.1364/prj.379555 · 被引用次数：55 · 研究领域：Advanced Fiber Laser Technologies、Photonic and Optical Devices、Advanced Fiber Optic Sensors

We report supercontinuum generation in nitrogen-rich (N-rich) silicon nitride waveguides fabricated through back-end complementary-metal-oxide-semiconductor (CMOS)-compatible processes on a 300 mm platform. By pumping in the anomalous dispersion regime at a wavelength of 1200 nm, two-octave spanning spectra covering the visible and near-infrared ranges, including the O band, were obtained. Numerical calculations showed that the nonlinear index of N-rich silicon nitride is within the same order of magnitude as that of stoichiometric silicon nitride, despite the lower silicon content. N-rich silicon nitride then appears to be a promising candidate for nonlinear devices compatible with back-end CMOS processes.