Quantum material topology via defect engineering

作者：Anh Pham, Panchapakesan Ganesh · 发表于：Physical review. B./Physical review. B · 年份：2019 · DOI：10.1103/physrevb.100.241110 · 被引用次数：9 · 研究领域：Topological Materials and Phenomena、Graphene research and applications、Electronic and Structural Properties of Oxides

Current approaches of discovering new topological quantum materials, such as (magnetic) Weyl materials, by screening material databases or by rational design suffer from experimental challenges in growing the material in the desired geometry, hampering their potential applications. We take an approach of defect-engineering a topology starting from systems with experimentally well-controlled growth. Using SnTe, an experimentally viable topological crystalline insulator, as our model system, we elucidate the different effects of breaking time-reversal, inversion, and mirror symmetries using magnetic dopant defects, to controllably induce a topological phase transition. To this effect, we compute the thermodynamics, magnetism, and band-structure topology of magnetically doped SnTe using a full ab initio approach. In this process, we have discovered that Cr-doped SnTe is a Weyl semimetal. We have computed its classic Fermi-arc experimental signature on the (001) surface and also showed that it has a large anamolous Hall conductivity (AHC) of $\ensuremath{\sim}250 {\mathrm{\ensuremath{\Omega}}}^{\ensuremath{-}1}\phantom{\rule{0.16em}{0ex}}{\text{cm}}^{\ensuremath{-}1}$. We predict a large Curie temperature (${T}_{c}$) of 62 K even at $3.3%$ doping, with both ${T}_{c}$ and AHC being tunable with Cr concentration, suggesting potential for room-temperature applications. Our study in general paves the way for defect-designing room-temperature topological quantum phases.