Single Event Effects Testing for the ADC12DJ3200QML-SP 12-bit, Dual 3.2-GSPS Single 6.4-GSPS, RF-Sampling, JESD204B, Analog-to-Digital Converter (ADC)

作者：Kyle Lewis, Jered Sandner, Matthew Guibord, R.C. Taft, Alexander Bodem, T. Hoehn, Philipp Schmitz, Vineethraj Nair, Filip Savic, Matthew Childs, Paul J. Kramer · 年份：2019 · DOI：10.1109/redw.2019.8906557 · 被引用次数：6 · 研究领域：Radiation Effects in Electronics、Electrostatic Discharge in Electronics、Low-power high-performance VLSI design

The effects of heavy-ion irradiation on the single-event effect performance of the Texas Instruments ADC12DJ3200QML-SP and its JESD204B serialized interface were characterized using the K500 Cyclotron facility at Texas A&M University. The results demonstrate latch-up immunity up to LETEFF= 120 MeV-cm2/mg at TJ= 125°C while operating at the maximum recommended operating supply voltages. Dynamic cross sections for the code error rate of the device and the serialized interface are also presented.