Effect of oxygen pressure on GZO film as active layer of the TFT fabricated at room temperature

作者：Xiaoqing Li, Hongke Zhang, Xubing Lu, Zhiqiang Fang, Rihui Yao, Yiping Wang, Hong Tao, Hongfu Liang, Honglong Ning, Junbiao Peng · 发表于：Superlattices and Microstructures · 年份：2019 · DOI：10.1016/j.spmi.2019.106317 · 被引用次数：14 · 研究领域：Thin-Film Transistor Technologies、ZnO doping and properties、Ga2O3 and related materials