Band engineering of III-nitride-based deep-ultraviolet light-emitting diodes: a review

作者：Zhongjie Ren, Huabin Yu, Zhongling Liu, Danhao Wang, Chong Xing, Haochen Zhang, Chen Huang, Shibing Long, Haiding Sun · 发表于：Journal of Physics D Applied Physics · 年份：2019 · DOI：10.1088/1361-6463/ab4d7b · 被引用次数：146 · 研究领域：GaN-based semiconductor devices and materials、Ga2O3 and related materials、ZnO doping and properties

Abstract III-nitride deep ultraviolet (DUV) light-emitting diodes (LEDs) have been identified as promising candidates for energy-efficient, environment-friendly and robust UV lighting sources with potential applications in water/air purification, sterilization, and bio-sensing. However, the performance of state-of-art DUV LEDs is far from satisfactory for commercialization due to their low internal quantum efficiency, large current leakage and efficiency droop at high current injection, etc. Extensive efforts have been devoted to properly designing the band structures of such luminescent devices to enhance their output power. In this review, we summarize the recent progress of various energy band designs and of the engineering of DUV LEDs, with particular attention paid to the various approaches in band engineering of electron-blocking layers, quantum wells, quantum barriers and the implementation of many novel structures such as tunnel junctions and ultrathin quantum heterostructures utilized to enhance their efficiency. These inspirational approaches pave the way towards the next generation of greener and more efficient UV sources suitable for practical applications.