Vapor-Phase Incommensurate Heteroepitaxy of Oriented Single-Crystal CsPbBr3 on GaN: Toward Integrated Optoelectronic Applications

作者：Liyun Zhao, Yan Na Gao, Man Rong Su, Qiuyu Shang, Zhen Liu, Qi Li, Qi Wei, Meili Li, Lei Fu, Yangguang Zhong, Jia Shi, Jie Chen, Yüe Zhao, Xiaohui Qiu, Xinfeng Liu, Ning Tang, Guichuan Xing, Xina Wang, Bo Shen, Qing Zhang · 发表于：ACS Nano · 年份：2019 · DOI：10.1021/acsnano.9b02885 · 被引用次数：83 · 研究领域：Perovskite Materials and Applications、Optical properties and cooling technologies in crystalline materials、Solid-state spectroscopy and crystallography

Integrating metallic halide perovskites with established modern semiconductor technology is significant for promoting the development of application-level optoelectronic devices. To realize such devices, exploring the growth dynamics and interfacial carrier dynamics of perovskites deposited on the core materials of semiconductor technology is essential. Herein, we report the incommensurate heteroepitaxy of highly oriented single-crystal cesium lead bromide (CsPbBr 3 ) on c -wurtzite GaN/sapphire substrates with atomically smooth surface and uniform rectangular shape by chemical vapor deposition. The CsPbBr 3 microplatelet crystal exhibits green-colored lasing under room temperature and has a structural stability comparable with that grown on van der Waals mica substrates. Time-resolved photoluminescence spectroscopy studies show that the type-II CsPbBr 3 –GaN heterojunction effectively enhances the separation and extraction of free carriers inside CsPbBr 3 . These findings provide insights into the fabrication and application-level integrated optoelectronic devices of CsPbBr 3 perovskites.