A 3D MEMS In-Chip Solenoid Inductor of High Inductance Density for Future Power-MEMS Device

作者：Tiantong Xu, Jiamian Sun, Hanxiao Wu, Haiwang Li, Hanqing Li, Jingchao Xia, Zhi Tao, Martin A. Schmidt · 年份：2019 · DOI：10.1109/transducers.2019.8808466 · 被引用次数：2 · 研究领域：Advanced MEMS and NEMS Technologies、Innovative Energy Harvesting Technologies、Acoustic Wave Resonator Technologies

In this paper, we report the design, fabrication, and measurement of a new type of 3D solenoid inductor that is embedded in the Si substrate. Inductors were fabricated with good structural integrity and repeatability by a CMOS-compatible MEMS fabrication process. Measurement results show the highest quality factor (37.6@21MHz) was found in a 5-turn inductor and the highest inductance and inductance density (86.6nH and 21.7nH/mm2) in a 20-turn inductor. An electromagnetic switch was built to test its performance and the inductor was also transferred into a flexible substrate (PDMS) to test its potential usage in the flexible/wearable device. This type of inductor may have potential application prospects in Power-MEMS devices and can improve the power density and efficiency on those devices.