Atomistic Mechanisms for the Thermal Relaxation of Au -hyperdoped Si

作者：Wenjie Yang, Quentin Hudspeth, Philippe K. Chow, Jeffrey M. Warrender, Naheed Ferdous, Elif Ertekin, Girish Malladi, Austin J. Akey, Michael J. Aziz, J. S. Williams · 发表于：Physical Review Applied · 年份：2019 · DOI：10.1103/physrevapplied.12.024015 · 被引用次数：26 · 研究领域：Photonic and Optical Devices、Silicon Nanostructures and Photoluminescence、Nanowire Synthesis and Applications

Implanting gold ions in silicon at concentrations far higher than the equilibrium solubility limit promotes sub-band-gap optical absorption, and thus has been explored in the context of Si-based near-infrared photodetectors. This absorption enhancement decreases after annealing, though, according to the structural relaxation of the material. In this article, the evolution of composition and structure of Au-hyperdoped Si after thermal relaxation is investigated in detail. The results provide crucial information for fabricating devices using Au-hyperdoped Si, and may also pertain to other hyperdoped impurities.