Hysteresis‐Free Hexagonal Boron Nitride Encapsulated 2D Semiconductor Transistors, NMOS and CMOS Inverters

作者：Shuai Liu, Kai Yuan, Xiaolong Xu, Ruoyu Yin, Der‐Yuh Lin, Yanping Li, Kenji Watanabe, Takashi Taniguchi, Yongqiang Meng, Lun Dai, Yu Ye · 发表于：Advanced Electronic Materials · 年份：2018 · DOI：10.1002/aelm.201800419 · 被引用次数：36 · 研究领域：2D Materials and Applications、Graphene research and applications、MXene and MAX Phase Materials

Abstract Graphene and subsequently discovered layered semiconducting transition metal dichalcogenides (TMDCs) exhibit numerous exotic physical properties and broad potential device applications. These 2D semiconducting TMDCs have become particularly interesting in next‐generation electronic device applications due to their atomic thickness and nonzero bandgap. However, as there is no bulk volume, the 2D nature makes the electronic transport in these crystals highly sensitive to the environmental conditions, such as humidity, adsorbates, and trapped charges in neighboring dielectrics. Due to this environmental sensitivity, 2D‐based circuits and devices suffer from a large and undesirable environment‐induced hysteresis, which must be eliminated for reliable operation and computation. By mechanically assembling van der Waals (vdWs) heterostructures and edge‐contacted graphite electrodes, the 2D semiconducting channel is sealed completely and protected. Here, hexagonal boron nitride ( h BN) encapsulated high‐performance, hysteresis‐free 2D semiconductor transistors, n‐type metal‐oxide semiconductor, and complementary metal‐oxide semiconductor inverters are fabricated. The h BN encapsulation provides excellent protection of semiconducting n‐MoS 2 and p‐WSe 2 from environmental factors, resulting in hysteresis‐free 2D electronics characteristics that are necessary for the realization of 2D electronics and computing.